Very recently, PCE of >14% has been reported with MA 0.5 FA 0.5 Pb 0.75 Sn 0.25 I 3 cells, for band gaps >1.3 eV and all-perovskite four-terminal tandem cells with 19% efficiency (5, 6, 7). Here, we demonstrate a stable, 14.8% efficient perovskite solar cell based on a ~1.2-eV band gap FA 0.75 Cs 0.25 Pb 0.5 Sn 0.5 I 3 absorber.
In perovskite solar cells (PSCs) with wide band gaps (∼1.65–1.68 eV), the poor quality of perovskite films due to uncontrolled fast crystallization significantly contributes to the loss in open-circuit voltage (VOC), thereby limiting the further enhancement of silicon/perovskite tandem solar cells (TSCs). To
Fig. 2. Influence of series resistance on perovskite solar cell performance. CdS a non-oxide metal chalcogenide is an outstanding semiconductor material with a direct band gap, high optical properties, high stability, appropriate energy band gap, low-temperature fabrication material, and excellent electron mobility of (∼ 10 cm 2 V/s).
The effect of adding the spin orbit coupling (SOC) correction on the band gap energy of the solar perovskite materials CsXCl3 (X = Sn, Pb or Ge) has been inspected for the optimized lattice parameter values of each material.
This review focuses on low bandgap perovskite solar cells, including the materials and device architectures employed in these cells. Novel materials and methods for bandgap engineering and stability enhancement are explored, including mixed-halide perovskites, double perovskites, and perovskite quantum dots.
High bandgap perovskite solar cells have made great strides in improving their efficiency. However, low bandgap perovskite materials have received interest as a means to increase the solar spectrum absorption range .