F3D can also generate a compact device model for MOM capacitors that can be used for efficient circuit simulation. These models have a limited number of elements and allow describing frequency-dependent characteristics of MOM capacitors. III.
Normally, lowest metal layers (e.g, M1 – M5) with minimum metal line width and spacing are used for MOMs to maximize the capacitance density. Fig.1. Vertical parallel-plate and vertical bar MOM capacitor structures.
Capacitor matching and statistical modeling Variation of MOM capacitor parameter occurs due to process variability: metal and dielectric layer thickness, metal widths, and other variations of process parameters over the wafer, wafer-to-wafer, and lot-to-lot.