The lateral series resistance is an important quantity to determine the losses associated with the back contact pattern. Fig. 4 shows the lateral series resistance determined with the three-intensities-method (empty red squares), with the illuminated-suns Voc -method (empty blue circles) and with the illuminated-dark-method (filled black squares).
Fig. 4. The lateral series resistance of HIP-MWT cells with ρ =1.9 Ω cm as a function of the half gap width induced by the rear n-type contact is determined from measured current-voltage curves according to three different methods to extract the effective series resistance (symbols) along with the corresponding simulations (lines).
Both external polarities, the n - and p -type contact of metal wrap through solar cells are located side by side at the back surface, which induces a contribution to the total series resistance of the device, which can significantly reduce the fill factor compared to conventional H-pattern devices , , .
In perovskite solar cells (PSCs), great efforts have been made in this regard to confer flat energy landscapes with minimized electronic disorders across the junctions, resulting in high power conversion efficiencies (PCEs) 1, 2, 3.
The substantially improved stability of perovskite modules with PPAd treatment further verified the abovementioned film degradation mechanisms, highlighting the significance of lateral energetic micro-homogeneity in governing the longevity of scaled-up perovskite devices.
A HIP-MWT solar cell (see Fig. 1) is manufactured on a five-inch (125 mm) p-type Czochralski-grown silicon wafer with a specific resistance of approximately 1.8 Ω cm using the TOPAS (thermal oxide passivated all sides ) approach. This approach results in a thin thermal silicon oxide passivation at the front and the rear of the wafers.