The temperature dependence of individual efficiencies (Absorption efficiency, Thermalization efficiency, Thermodynamic efficiency and Fill factor) and overall conversion efficiency of a polycrystalline silicon solar cell has been investigated in temperature range 10–50 °C. The all efficiencies present a decrease versus temperature increase.
Presently, silicon-based solar cells account for 95% of the photovoltaic market. According to the Shockley-Queisser efficiency limitation, the maximum efficiency value of silicon-based solar cells is about 31%.
Polycrystalline silicon PV cell structure. It will be assumed the ideal solar cell in this study. The contribution from the base to the photocurrent being greater than that of the emitter (Furlan and Amon, 1985). The present work will be taken account the base contribution assumed the center of the generation-recombination phenomena.
The efficiency of the single-junction terrestrial crystalline silicon PV cell is around 26% today (Green et al., 2019, Green et al., 2020). The mono-Si solar cell outputs strongly depends on the environmental parameters such as light intensity, tracking angle and cell temperature etc. (Ouedraogo et al., 2019, Chander et al., 2015).
The base doping level on which the open circuit voltage depends can be used to improve the temperature resistivity of the polycrystalline silicon PV cell. A comparison was made between the overall efficiency obtained by the conventional method and the overall efficiency found by the multiplication of the four individual efficiencies.
The best real-world silicon solar cell to date, developed by Kaneka Corporation, is able to achieve 26.7% conversion efficiency 7, 8. A loss analysis of this 165 μm -thick, heterojunction IBC cell shows that in absence of any extrinsic loss mechanism the limiting efficiency of such a cell would be 29.1% 7.