Series and shunt resistances of silicon solar cells are determined using earlier published method (Priyanka et al., 2007) at One Sun intensity. Pre-exponential constants and ideality factors, I and 2 in double exponential models are determined using Isc–V characteristics of the cell. Values of 2) exponential models. Shunt resistance
This concludes that the parallel resistances implemented in the designed circuit of solar cells are developed of twin parallel-connected parallel resistances; due to the holes and due to the electrons.
However, the efficiency of these cells is greatly influenced by their configuration and temperature. This research aims to explore the current–voltage (I−V) characteristics of individual, series, and parallel configurations in crystalline silicon solar cells under varying temperatures.
Wang and Hsu (2011) investigated the characteristics of solar cells in series and parallel configurations and found that the parallel arrangement showed improved output power compared to the series configuration . Temperature and configuration alter the open-circuit voltage (V oc) and short-circuit current (I sc).
Series and shunt resistances in solar cells affect the illuminated current–voltage (I–V) characteristics and performance of cells. The curve factors of commercial solar cells are lower than ideal, primarily due to R (Wolf and Rauschenbach, 1963). The resistive losses become larger as substrate size increases. However, in both
The experimental setup, as shown in Figure 2, is capable of generating controlled conditions for measuring the IV (current–voltage) characteristics of crystalline silicon solar cells in different configurations (individual, series, and parallel). The key components of the experimental setup included: Figure 2. Experimental setup.