N-Type silicon cells offer a significant advantage over their P-Type counterparts due to their resilience against Light Induced Degradation (LID). LID can significantly impair the performance of solar panels by reducing their efficiency as they are exposed to sunlight over time.
Res. Express4 072001 Crystalline silicon, including p-type czochralski (CZ) mono-crystalline and multi-crystalline (mc) silicon, has been the workhorse for solar cell production for decades. In recent years, there has been many developments in n-type c-Si solar cells basically due to the advantages of n-type c-Si wafers over p-type wafers.
n-type silicon cells by a broad base of cell and module suppliers include the higher cost to manufacture a p-type emitter junction and the higher cost of the n-type mono silicon crystal. Technologies to reduce the cost of manufacturing the p-type emitter by diffusion or implantation of boron are being developed in the industry .
Past barriers to adoption of n-type silicon cells by a broad base of cell and module suppliers include the higher cost to manufacture a p-type emitter junction and the higher cost of the n-type mono silicon crystal.
As discussed in this paper, the strength of n-type solar cells are their advantages over p-type Si wafers, and hence shows potential opportunities for making high-efficiency solar cells. The main issues are technological limitations and B diffusion difficulties, which are weaknesses that research continues to address.
In recent years, there has been many developments in n-type c-Si solar cells basically due to the advantages of n-type c-Si wafers over p-type wafers. However, there are some limitations in making n-type solar cells considering the technologies involved to fabricate p-type cells.